Abstract
Advances in Metal-Oxide-Semiconductor (MOS) capacitors fabrication and processing techniques have significantly reduced the adverse effects of processing on the disruption of the ideal MOS devices. However, changes in interface state density and series resistance have remained significant issues for the performance of MOS devices. In this paper, the impacts of multi-layers on the electrical interface states and series resistance characteristics of Al/Er2O3/Eu2O3/SiO2/n-Si/Al MOS capacitors is reported, by analyzing Capacitance – Voltage (C – V), conductance (G/ω – V), series resistance, and interface states density. Ideal characteristics have been observed for obtained series resistance (Rs) and interface state density (Dit), and the calculated values of Dit are in order of (1010 eV2Cm−2). The outcomes have demonstrated that the Rs and the Dit are essential factors that influence the electrical characteristics of the MOS capacitors. Furthermore, interfacial layers are the cause of variations in the Rs and Dit.
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