Effects of sequential annealing in low oxygen partial-pressure and NO on 4H-SiC MOS devices

Abstract

The effects of low oxygen partial pressure (low-pO2) annealing and NO annealing on both performance and reliability of silicon carbide (SiC) MOS capacitors are verified, and the sequential annealing in low-pO2 and NO is also investigated. The sequential annealing is effective to improve the reliability of SiC MOS capacitors but shows slight deterioration of interface property. The results show that annealing in the atmosphere of low partial pressure oxygen changes the distribution of defect about the SiO2/SiC interface, and influences the following NO annealing effect. The mechanism of oxidation and annealing is discussed, and some suggestions on annealing are given. This experiment provides some inspiration for the combination of annealing processes and the optimization of annealing conditions.