Abstract
The effects of segregated Ge on the electrical properties of the SiO2/SiGe interface are investigated. It is observed that the segregated Ge near the SiO2/SiGe interface, formed during oxidation of the SiGe layer, affects the threshold voltage of a metal-oxide-semiconductor (MOS) structure, and that the flat-band voltage shift increases when the Ge segregation is increased. The densities of the interface states and fixed charges are measured using the capacitance-voltage (C–V) method, and the relationships between these results and the material properties are examined. From the results, the SiOx structures are responsible for the increased negative fixed charges near the SiO2/SiGe interface. The mechanism proposed for the generation of negative fixed charges is that the oxygen in the Ge pileup region forms a Si–O–Ge bonding structure initially, and then the weaker Ge-O bond can easily be broken, leaving a Si–O– dangling bond and elemental Ge. The Si–O– dangling bond assumes a negative fixed charge state by trapping an electron.
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