Abstract

Single junction p-i-n μc-Si:H solar cells were prepared in a low-cost, large-area single chamber radio frequency plasma enhanced chemical vapor deposition system. The effects of seeding processes on the growth of μc-Si:H i-layers and performance of μc-Si:H solar cells were investigated. Seeding processes, usually featured by highly hydrogen rich plasma, are effective in inducing the growth of μc-Si:H i-layers. It has been demonstrated that p-layer seeding methods are preferable to i-layer seeding. While performance of μc-Si:H solar cells produced by i-layer seeding methods was usually limited by very low fill factors, μc-Si:H solar cells with good initial and stabilized conversion efficiencies were obtained by p-layer seeding.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.