Abstract
The effects of second phases on microarc oxidation (MAO, also named plasma electrolytic oxidation-PEO) behavior of Mg base materials were investigated and the related mechanism was discussed. The formation of barrier layer and its influence on sparking discharge behavior were characterized and analyzed on the base of systematic selecting and designing substrate materials. The variation of second phases at the early MAO stage was observed and analyzed by SEM and EDS, and then the effect mechanism of second phases on MAO behaviors was revealed. Voltage evolution trend during MAO were recorded to study the formation state of the barrier layer on the different Mg base materials. According to the growth mechanism of MAO film, the film growth process can be simplistically considered as a repeated breakdown and reconstruction process of a capacitor. Accordingly, the *国家自然科学基金项目51001036和国家国际科技合作专项项目2014DFR50560资助 收到初稿日期: 2015-09-25,收到修改稿日期: 2016-03-21 作者简介:王艳秋,女, 1979年生,讲师 DOI: 10.11900/0412.1961.2015.00500 第689-697页 pp.689-697
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