Effects of scattering mechanisms on thermoelectric properties of bismuth

Abstract

This discussion explores various facets of thermoelectric materials research, focusing on bismuth (Bi) and its semiconductor form (Bi'). It highlights Bi's semiconductor nature and the importance of Bi' in thermoelectric materials. The thermoelectric properties of Bi' are examined, emphasizing temperature-dependent superiority. Electronic lifetimes and thermoelectric properties, considering scattering mechanisms like acoustic and ionized impurity scattering, is discussed. Bi's thermoelectric properties are influenced by temperature and carrier concentration, showing potential superiority over traditional Bi, especially at room temperature. The results show that ZT reaches a maximum value of 0.59 at 300K. The intricate relationship between Bi' thermoelectric performance, temperature, and scattering mechanisms, particularly ionized impurity scattering, is elucidated. In addition, Bi' holds promise for superior thermoelectric performance, offering valuable insights for future material development.