Abstract
Transparent heat-insulating SnO2 films were prepared on the glass substrate with sol-gel. The effects of Sb doping on the structure and photoelectric properties of the films were investigated. The films were characterized by scanning electron microscope (SEM), X-ray diffractometer (XRD), X-ray photoelectron spectroscopy (XPS), Ultraviolet–Visible-Near Infrared Spectrometer (UV-VIS-NIR) and Hall Effect tester. The results show that the doping of Sb did not change the basic crystal structure of the SnO2 film, but reduced the crystallinity of the film. With the increase of Sb doping, the grain size decreases first and then maintains basically invariable. The sheet resistance of the film decreases first and then increases. The transmittance of the substrate glass coated with this film (hereinafter referred to as the film's transmittance) in the near-infrared region (780–2500 nm) decreases from 92.55% to 60.48%, and increases a little when the doping amount exceeded 11 mol%. And its transmittance of visible light (380–780 nm) fluctuated slightly between about 81% and 86%.
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