Abstract
The effects of rf power on the hydrogen bonding and structural order in hydrogenated silicon (Si:H) thin films prepared by plasma enhanced chemical vapor deposition (PECVD) from silane highly diluted with hydrogen have been studied. The radio‐frequency, rf power was varied from 20 to 100 W representing power densities of 0.7 to 3.5 mW/cm2 for our home‐built rf PECVD system. The structure and hydrogen bonding properties of the films were studied using Fourier transform infrared and micro‐Raman scattering spectroscopy. The hydrogenated silicon films showed dominant presence of monohydride bonds indicating homogeneity of the amorphous component of the films. Rf powers of 40 and 60 W produced films with the low hydrogen content and increased concentration of polyhydrides bonds. The crystalline volume fraction decreased with increase in rf power and structural order was enhanced for the films prepared at rf power of 40 and 60 W.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
