Abstract
The influence of rf sputtering power and annealing temperature on the dc conductivity ( σ RT), activation energy (Δ E) and interface trapped charge density ( D it) of rf sputtered hydrogenated amorphous silicon carbide films were investigated. The increase in σ RT and the decrease in Δ E as rf power increased indicate an increase in dangling bond density. Furnace annealing, however, causes a reduction in σ RT and D it. The electrical results of the as-prepared and annealed films agreed well with the infrared results.
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