Effects of recombination parameters in p +n indium phosphide solar cells

Abstract

This work, using a numerical code PC-1D, describes the effects of surface and bulk recombination on the performance of p +n indium phosphide solar cells. It is shown that surface recombination velocity and minority carrier diffusion lengths play a dominant role in controlling the efficiency of p +n cells. In order to have an acceptable series resistance, a p +n cell must have an emitter that is thicker than a n +p cell emitter. Consequently the performance of a p +n cell is more sensitive to the front surface recombination velocity. Improved surface and bulk recombination parameters can lead to cell efficiencies in excess of 24% AMO at 25°C.