Abstract
This study investigated the effects of a thin aluminum oxynitride (AlOxNy) gate insulator on the electrical characteristics of AlGaN/GaN-on-SiC metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). The fabricated AlGaN/GaN-on-SiC MIS-HEMTs exhibited a significant reduction in gate leakage and off-state drain currents in comparison with the conventional Schottky-gate HEMTs, thus enhancing the breakdown voltage. The effects of gate recess were also investigated while using recessed MIS-HEMT configuration. The Johnson’s figures of merit (= fT × BVgd) for the fabricated MIS-HEMTs were found to be in the range of 5.57 to 10.76 THz·V, which is the state-of-the-art values for GaN-based HEMTs without a field plate. Various characterization methods were used to investigate the quality of the MIS and the recessed MIS interface.
Highlights
AlGaN/GaN high-electron-mobility transistors (HEMTs) have been developed for high-power and high-frequency applications because of their excellent properties, such as high electron mobility of two-dimensional electron gas (2-DEG) channel, high breakdown field, and wide energy bandgap [1,2,3]. AlGaN/GaN HEMTs have high commercial applications in high-frequency power amplifier industries, the conventional Schottky-gate HEMTs suffer from large gate leakage current [4], which limits the output power performance and induces reliability issues [5]
A 5 nm AlOx Ny thin film was investigated for its use as a gate insulator for AlGaN/GaN-on-SiC
A 5 nm AlOxNy thin film was investigated for its use as a gate insulator for AlGaN/GaN-on-SiC
Summary
AlGaN/GaN high-electron-mobility transistors (HEMTs) have been developed for high-power and high-frequency applications because of their excellent properties, such as high electron mobility of two-dimensional electron gas (2-DEG) channel, high breakdown field, and wide energy bandgap [1,2,3]. AlGaN/GaN HEMTs have high commercial applications in high-frequency power amplifier industries, the conventional Schottky-gate HEMTs suffer from large gate leakage current [4], which limits the output power performance and induces reliability issues [5]. AlO xNy films can deposited characteristics recessed AlGaN/GaN x Nbe y ) MIS while using various deposition techniques, among plasma enhanced layeris deposition the performance was evaluated using. AlOfilms can beadeposited while using x Ny films gate insulators been reported for enhancement-mode power layer switching devices [22,23,24],is no various depositionhave techniques, among which plasma enhanced atomic deposition a in-depth study has been reported for a recessed. Have been reported for enhancement-mode power switching devices [22,23,24], no in-depth study has been reported for a recessed AlGaN/GaN RF-HEMT with a thin AlOx Ny gate insulator
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