Abstract
Strain-compensated GaInNAs/GaAsP quantum well structures and lasers were grown by gas-source molecular beam epitaxy using a rf-plasma nitrogen radical beam source. Effects of rapid thermal annealing on the optical properties of GaInNAs/GaAsP quantum well structures as well as laser diodes were examined. It was found to significantly increase the photoluminescence from the quantum wells and reduce the threshold current density of the lasers, mainly due to a removal of N-induced nonradiative centers from GaInNAs wells.
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