Effects of rapid thermal annealing on GaInNAs/GaAs multiple quantum wells

Abstract

Rapid thermal annealing (RTA) has been performed on GaInNAs/GaAs multiple quantum wells (QW), which were grown by GSMBE using arsine and a RF-plasma nitrogen radical beam source. RTA improves Photoluminescence (PL) intensity. The PL peak also blue-shifts at higher annealing temperatures, most likely due to Ga and In interdiffusion. The optimal annealing temperature is higher for N-containing samples than for N-free GaInAs/GaAs samples. The higher the nitrogen concentration, the larger the shift and proportionally the larger the increase in the PL intensity with RTA, indicating a higher density of non-radiative centers with N incorporation. For the sample consisting of a 2-period Ga 0.7In 0.3N 0.02As 0.98/GaAs QW and a 2-period Ga 0.7In 0.3As/GaAs QW, the room temperature PL intensity of N-containing QW after RTA at 750°C for 10 s is comparable to that of N-free QW.