Abstract
Substantial blue shifts in the transition energies of GaInAs/AlInAs single quantum wells were observed due to localized SiO2 capping and rapid thermal annealing at temperatures between 750 and 900 °C. In contrast to previously reported results, regions capped with SiO2 exhibited blue shifts up to 74 meV while regions with no SiO2 showed minimal shifting. With this band-gap change, a lateral index change of approximately −0.6% is anticipated making this process suitable for index-guided lasers. Samples also exhibited up to 15-fold increases in PL efficiencies due to the annealing process. The dependence of energy shifts and PL efficiencies is studied by measuring room-temperature and low-temperature photoluminescence.
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