Effects of random fields in an antiferromagnetic Ising bilayer film

Abstract

The magnetic properties (phase diagrams and magnetizations) of an antiferromagnetic Ising bilayer film with random fields are investigated by the use of the effective field theory with correlations. It is examined how an uncompensated magnetization can be realized in the system, due to the effects of random fields in the two layers. They show the tricritical, compensation point and reentrant phenomena, depending on these parameters.