Effects of Radio-Frequency Sputtering Power on Low Temperature Formation of MoS₂ Thin Films on Soda-Lime Glass Substrates.

Abstract

For the realization of the economical and reliable fabrication process of molybdenum disulfide (MoS²) layers, MoS² thin films were directly formed a on soda-lime glass substrate by RF sputtering and subsequent rapid thermal annealing (RTA) at a temperature range of 400-550 °C. Using scanning electron microscopy and atomic force microscopy, it was possible to investigate more stable surface morphologies of MoS² layers at lower RF sputtering powers irrespective of the RTA temperature. Even at an RTA temperature of less than 550 °C, the Raman exhibited more distinct E12g and A1g peaks for the MoS² layers sputtered at lower RF powers. The X-ray photoelectron spectroscopy results revealed that more distinct peaks were observed at a higher RTA temperature, and the peak positions were moved to higher energies at a lower RF sputtering power. Based on the Hall measurements, higher carrier densities were obtained for the MoS² layers sputtered at lower RF powers.