Effects of Quantized Energy Levels of QDs Confined in Asymmetric Barriers within Silicon Nanowire Transistor

Abstract

Single-electron transistors with silicon nanowire channel are successfully fabricated using TMAH anisotropic etching and thermal oxidation method. Transport characteristics of devices are investigated with different source/drain bias at low temperatures. Clear negative differential conductance and CB oscillations with multiple fine peaks are observed, which can be successfully explained considering the asymmetric tunneling barriers and large quantized energy levels due to ultra-small quantum dots. Especially, double-peak coupling effect is observed in Ids-Vg characteristics for the first time