Abstract
We have fabricated and investigated the effect of CdSe/ZnS quantum dot (QD) concentrations on the performance of self-assembly hybrid inorganic/organic light emitting diodes (QD-OLEDs). The uniform distribution of QDs with controllable density was achieved using the conventional spin-coating method. There was a QD threshold concentration for the emission of QDs in QD-OLED. Below that threshold concentration we did not observe the QD emission from the QD-OLED. The best performance of QD-OLED was found for the QD concentration of -9 x 10(11) cm(-2). The QD electroluminescence intensity was increased about three times after the annealing of QD-OLED at 80 degrees C for about 20 minutes in nitrogen atmosphere. The QD electroluminescence peak energy was remain same before and after the annealing of QD-OLED. The maximum external quantum efficiency was around 2.1%. The effect of process parameters and the QD emission mechanism are discussed.
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