Abstract
This study focused on the effect of laser annealing on Pt/Ag metal contacts deposited on Silicon, (Si) substrates. DC sputtering was used to deposit the metal thin films on the Si. The samples were treated by annealing using pulsed Nd:YAG laser. Then, the samples were characterized based on its morphological, optical, structural and electrical properties. From surface morphological, it is clearly shown that the surface roughness of the laser annealed sample is smoother than the as-deposited sample. The calculated energy band gap was obtained as 1.38 eV. For electrical properties, the resistivity for laser anneal was lower compared to as-deposited sample, which are 5.10 × 10-4 ohm-cm and 1.37 × 10-3 ohm-cm respectively. The conductivity increases when the resistivity decreases.
Highlights
The invention of semiconductor devices is a revolution that would not be an exaggeration
Fabrication of deposition thin films, which have been widely used in devices in the making of semiconductor involves MOCVD [5], thermal evaporation, sputtering [6], and electron beam evaporation
MOCVD produce good crystal, it is high cost compared to thermal evaporation
Summary
The invention of semiconductor devices is a revolution that would not be an exaggeration. Semiconductor devices included transistors, diodes, light emitting diodes, and solar cells are getting consideration due to its uses. These devices need a low resistance of contacts, which is between metal and semiconductor. MOCVD produce good crystal, it is high cost compared to thermal evaporation. Sputtering offer good quality deposited thin films and have least cost than thermal expansion. These technique have controllable sputtering parameter and high reproducibility [7][8][9]. Optical annealing or known as laser annealing offer more controllable deposition area as compared to the thermal annealing. This study investigate the effects of pulsed laser annealing on Pt/Ag double layer metal thin films on Si and glass substrate based on surface morphology, optical, structural and electrical properties
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