Abstract
The effects of proton irradiation on device modeling of SiGe power HBTs are investigated in this work. On-wafer DC, small- signal AC, linearity and large-signal load-pull measurements were performed before and after proton irradiation. Minor degradation in DC, small-signal AC and large-signal load-pull characteristics and minor improvement in linearity are well modeled with the extraction of model parameter changes after radiation. It is found that the major changes that influence the device performance of SiGe power HBTs after proton radiation are the increase of base and emitter resistances.
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