Abstract
AbstractEffects of proton irradiation on the optical and electrical properties of n‐InN with charge carrier concentrations of 2 – 5 × 1018 cm–3 have been investigated. Strong changes in photoluminescence spectra and electrical parameters of irradiated n‐InN are discussed. Proton irradiation of n‐InN results in the appearance of shallow donors in large concentrations. Comparison with the effects observed on heavily degenerate n‐InN after proton irradiation leads to the conclusion that these irradiation‐produced donors are native defects, most likely vacancies on the nitrogen sublattice.
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