Abstract
The effects of pressure on the doped Kondo insulators (KI) are studied in theframework of the slave-boson mean-field theory under the coherent potential approximation.A unified picture for both the electron-type KI and hole-type KI is presented. The density ofstates of the -electrons under the applied pressures and its variation with the concentrationof the Kondo holes are calculated selficonsistently. The specific heat coefficient, the zerotemperaturemagnetic susceptibility as well as the low-temperature electric resistivity of thedoped KI under various pressures are obtained. The two contrasting pressure-dependent effectsobserved in the doped KI systems can be.naturdy explained within a microscopic model.
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