Abstract
CuInS2 thin films were prepared onto indium tin oxide (ITO) substrates by sulfurization of electrodeposited CuxInySz precursor films under S atmosphere. The influences of deposition potential, Cu2+/In3+ ratio, sulfurization temperature, and sulfur content on the CuInS2 thin films were investigated. Phases and structures were characterized by powder X‐ray diffraction and Raman spectroscopy; surface morphology was characterized by Scanning Electron Microscopy; optical and electrical properties were characterized by UV‐Vis absorption and Mott‐Schottky curves, respectively. As a result, the optimal well‐crystallized CuInS2 films preparation parameters were determined to be deposition potential of −0.8 V, Cu2+/In3+ ratio of 1.4, sulfur content of 1 g, and the sulfurization temperature of 550°C for 1 h; CuInS2 thin films prepared by one‐step electrodeposition present the p‐type semiconductor, with thickness about 4‐5 μm and their optical band gaps in the range of 1.53~1.55 eV.
Highlights
CuInS2 is a promising material as absorber layer in photovoltaic devices owing to its direct band gap of about 1.5 eV and a high absorption coefficient, 105 cm−1 [1,2,3]
Expensive equipment is necessary for providing vacuum environment in the two methods, which limit their use in the production of large-area CuInS2 films
A high efficient solar cell based on electrodeposited CuInS2 films is fabricated, in which the efficiency is already close to that fabricated by vacuum method [21]
Summary
CuInS2 is a promising material as absorber layer in photovoltaic devices owing to its direct band gap of about 1.5 eV and a high absorption coefficient, 105 cm−1 [1,2,3]. CuInS2 is of particular interest for being environmentally friendly and cost-effective when compared to CuInSe2 where the toxic and costly Se existed. The conversion efficiency of about 13% for CuInS2-based solar cells has been achieved [4]. The value is still far below its theoretical value of 32% [5], which is mainly influenced by the quality of CuInS2 film
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