Abstract
The c-axis oriented Bi 4 Ti 3 O 12 thin films were prepared on Si(100), Y-ZrO 2 (100), SrTiO 3 (100) crystal, (111)Pt/Ti/Si and quartz glass substrates by sol-gel processing with bismuth nitrate and titanium butoxide. Effects of the lattice structure of the substrates, the annealing temperature, and the pH value of the solution on the orientation degree of Bi 4 Ti 3 O 12 thin films were investigated. The results showed that Bi 4 Ti 3 O 12 thin films with pure perovskite phase were obtained by using a solution of pH 2.5-3.5. The reaction mechanism in the precursor solution and the formation mechanism of c-axis orientation perovskite phase of Bi 4 Ti 3 O 12 thin films on various substrates were discussed. Completely c-axis oriented Bi 4 Ti 3 O 12 thin film on SrTiO 3 (100) substrate and highly c-axis oriented Bi 4 Ti 3 O 12 thin film on quartz glass substrate were acquired by using a solution of pH 3.5.
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