Effects of Pre-annealing on the Performance of Solution-processed Indium Zinc Oxide Thin-film Transistors

Abstract

We report on thin-film transistors (TFTs) with indium zinc oxide (IZO) channel layers fabricated via a pre-annealing process at various temperatures. The solution-processed IZO semiconductor matched the pre-annealing well at temperatures as low as 120 °C, and showed good performance: field-effect mobility of 7.9 ㎠/Vs, threshold voltage of 1.4 V, subthreshold slope of 0.48 V/dec, and a current on/off ratio of 2.9 x 10SUP7/SUP. To investigate the static response of IZO TFTs with preannealing at 120 °C, simple resistor load–type inverters were fabricated by connecting a resistor (10 MΩ).