Effects of Pr doping on crystalline orientation, microstructure, dielectric, and ferroelectric properties of Pb1.2−1.5xPrxZr0.52Ti0.48O3 thin films prepared by sol–gel method

Abstract

Pb1.2−1.5xPrxZr0.52Ti0.48O3 (PPZT, x = 0%, 1%, 2%, 3%, 4%, 5%) thin films were prepared by sol–gel method on Pt(111)/Ti/SiO2/Si(100) substrates to investigate the effects of Pr doping on the crystalline structure, microstructure, dielectric properties, ferroelectric properties, and fatigue properties of PPZT thin films. X-ray diffraction (XRD) and scanning electron microscope (SEM) analyses showed that all the samples have completely perovskite structure with (100) preferred orientation. The maximum dielectric constant and remnant polarization were obtained in 2% Pr-doped film. The results of fatigue test revealed that the fatigue properties of PPZT films doped with Pr concentrations of 1% and 2% were significantly improved.