Abstract
The magnetic susceptibilities, electrical resistivities, Hall coefficients, and Seebeck coefficients have been measured for single crystals of a narrow-gap semiconductor of FeSb 2 prepared using Sb metals of different purities. Below 40 K, carriers supplied from impurities of the Sb metal used as the raw material determine the transport quantities, making them very sensitive even to a ppm-level impurity concentration. The Seebeck coefficients observed here is as large as ∼-1400 µV/K at 20 K for crystals prepared using Sb of 99.9999% purity. We have not observed, however, the colossal value of ∼-45 mV/K reported by other group, even for the samples having almost equal impurity concentrations to those used in their work. Only the concentration dependence of S has been found to be similar to that of the previous data.
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