Abstract
In this paper we report a careful analysis of how the composition of a-SIC : H films with optical gap from 2.1 to 2.6 eV deposited by PECVD in SiH 4 + CH 4 gas mixtures are affected by variations of the molecule dwell time and of the effective dissipated power. We show that variations in the effective dissipated power (from 1.69 to 4.53 W) and in the dwell time (from 0.067 to 1 s) do not change the optoelectronic properties, whose dependence on the optical gap is typical of high electronic quality films deposited in the lower power regime and, also, that these variations lead only to different carbon incorporations in the growing films, without affecting the growth mechanism and the film structure.
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