Abstract
We report the effects of post deposition annealing (PDA) ambient O2 and FG gas on interfacial and electrical properties of HfO2 gate dielectric on nitrided Ge. The morphological studies of the dielectric, interface quality and chemical composition of the HfO2/Ge3N4/Ge were studied from X-ray diffraction (XRD), High-resolution transmission electron microscopy image (HRTEM) and X-ray photoelectron spectroscopy (XPS) respectively. Experimental results of O2 annealed devices exhibit improved interfacial and electrical characteristics such as high dielectric constant (~19.50), high capacitance (1.24 nF), small EOT (1.74 nm), Dit (3.18x1010 cm2 eV-1), oxide charges (Qeff 2.60x1012 eV-1) and gate leakage currents in the order nA (0.5x10-9 A/cm-2) as compared with FG annealing devices. The Fowler−Nordheim (F−N) tunnelling current conduction mechanism was also verified. Therefore, these results are evidence for the O2 gas PDA improves the interfacial and electrical properties of HfO2/Ge3N4/Ge MOS devices as compared with FG annealing.
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