Abstract
Chemical mechanical polishing (CMP) has been widely used in IC industry. To specify the proper polishing parameters for CMP is a very important and difficult task. In this paper, the effects of polishing parameters including polishing time, polishing heights and down force and elastic modulus of pad on the evolution of 3-D wafer patterns during CMP are discussed. The 3-D wafer patterns contain square-wave features with different pitches and an almost constant nominal density of 50%. Based on the linear model, the magnitude spectra of CMP system are given and the contact pressure distribution is calculated under different polishing circumstances. The evolutions of the 3-D wafer patterns under different polishing parameters are simulated. The effects of polishing parameters on polishing processes are discussed.
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