Abstract
The migration of boundaries between single crystal and polycrystalline ZnO was investigated using single crystals with well‐defined crystallographic faces. The migration rate of the basal (0001) planes through polycrystalline ZnO depended on the crystallographic polarity of the basal plane. Grain boundary migration in the [0001] direction was much faster than in the [000[Onemacr]] direction. Migration rates of boundaries in nonpolar directions were somewhat slower than that in the [0001] direction. Slow growth in the [000[Onemacr]] direction and rapid growth in nonpolar directions found in the present study help to explain the anisotropic growth of the grains that contain head‐to‐head inversion boundaries in ZnO varistor ceramics.
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