Effects of p(O 2) and p(CO 2) on epitaxial growth of BaTiO 3 thin films on MgO(100) substrates by using metal organic acid salts

Abstract

BaTiO 3 thin films were prepared by using metal organic acid salts on MgO(100) substrates, which have large lattice-misfit with BaTiO 3. Amorphous films prefired at 470°C were crystallized to BaTiO 3 phase by heat treatment at higher temperature. Crystallinity and in-plane alignment of the prepared films were found to depend on the heat-treatment conditions. BaTiO 3 films with high crystallinity but poor (100)-orientation were obtained in air at higher than 1200°C. Whereas, (100)-oriented epitaxial BaTiO 3 film was fabricated by annealing at 900°C under low oxygen partial pressure ( p(O 2)). Low carbon dioxide partial pressure ( p(CO 2)) is also found to be essential for preparation of epitaxial BaTiO 3 films on MgO substrates by using metal organic acid salts.