Abstract
Important factors contributing to line-edge roughness (LER) of chemically amplified resists are, among others, acid diffusion, and photoresist polymer molecular weight (MW). Their effects on the final LER are combined and simulations indicated that acid diffusion can be the major LER modifying factor. Acid-diffusion increases LER overall in a chemically amplified resist in comparison with a conventional one under the same deprotection fraction. In addition, extremely high values of acid-diffusion range can result in smaller LER for higher MW polymers. Under normal acid diffusion conditions, the effect MW on LER is seen to be of secondary importance. Explanations are given based on the critical ionization model for the resist film dissolution, and experimental verification is done with top-down scanning electron microscope (SEM) images for extreme-ultraviolet lithography (EUVL) photoresist.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
