Abstract
Diamond Schottky barrier diodes (SBDs) are fabricated on thin polycrystalline diamond films deposited by the microwave plasma-enhanced chemical vapor deposition (CVD) process. The diodes are photoirradiated with white light of different intensities while the changes in their electrical response to DC and time-varying signals were recorded. For time-varying signals, large signal sinusoidal waveforms, which drive the diodes between reverse bias and forward bias, have been utilized. The experimental results of the large switching signal test are compared with those of computer simulations. The results indicate that deep-lying and/or interface states of the CVD diamond SBDs, rather than the minority carrier storage effect in the CVD films, are responsible for the photoirradiation-dependent properties of diamond SBDs.
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