Abstract
Photo-assisted one-step electrodeposition has been applied to help in forming smooth and dense CuInSe2 films. The difference in surface morphology and crystalline quality between CuInSe2 films with various photo-assistance has been investigated. In the photo-assisted electrodeposition process, the many kinds of lamps providing maximum light intensity at about 380 to 620 nm were used as light source to be irradiated onto the surface of Mo-coated soda-lime glass substrates. The results suggested effects of photo-assistance including activating surface diffusion and growing high-crystalline quality films with reduced defects during electrodeposition.
Highlights
Chalcopyrite (CH) semiconductors have been applied as absorber layers for polycrystalline thin-film solar cells and extensively studied due to their importance in optoelectronic applications
They found that the photo-assisted molecular beam epitaxy (MBE) process dramatically reduced the epitaxial temperature to 300°C, where photons may supply an additional energy to the film surface and activate the surface diffusion and the dissociation of Se2 and Se4 molecules [9]
A sharp and strong cathodic peak was started at −0.1 V, which is usually attributed to the formation of Cu+ [11]: Cu2þ þ e−→Cuþ ð1Þ
Summary
Chalcopyrite (CH) semiconductors have been applied as absorber layers for polycrystalline thin-film solar cells and extensively studied due to their importance in optoelectronic applications. CIS-based thin films are the most promising for use as optical absorbers for high-efficiency solar cells as they match the solar spectrum. Various methods have been used for the growth of CIS films, such as metalorganic vapor-phase epitaxy [2], molecular beam epitaxy [3], flash evaporation [4], coevaporation [5,6], and electrodeposition [7]. A photo-assisted molecular beam epitaxy (MBE) process using an Hg lamp has been investigated by Tseng et al [8]. They found that the photo-assisted MBE process dramatically reduced the epitaxial temperature to 300°C, where photons may supply an additional energy to the film surface and activate the surface diffusion and the dissociation of Se2 and Se4 molecules [9]. A pulsed excimer laser (λ =248 nm) and pulsed YAG laser (λ =1,064, 532, 355, and 266 nm)
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