Abstract
The effects of phosphorus pressure during Zn diffusion and sequential annealing on the diffusion profiles and the photoluminescence spectra were investigated by secondary ion mass spectrometry (SIMS) analysis, capacitance-voltage (C-V) and photoluminescence (PL) measurements. Zn diffusion was performed using dimethylzinc as the Zn source. We found that as the PH3 flow rate increased, the diffusion depth deepened and a low-energy broad emission band at 1.23-1.32 eV (77 K) from near the Zn-diffused surface shifted to higher energy while its intensity increased. Another low-energy emission band at 1.28-1.33 eV (77 K) was observed in the Zn-diffused InP with high Zn interstitial concentration. The excitation and temperature dependences of the peak energies indicate that these bands are the so-called quasi-donor-acceptor pair bands with lattice relaxation. These results, along with the effect of annealing, suggest that a Zn incorporation mechanism with a contribution from phosphorus-related defects occurs near the surface.
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