Abstract
Effects of phosphorus diffusion on growth and shrinkage of oxidation-induced stacking faults (OSF) in silicon have been investigated using the Wright etch and transmission electron microscopy (TEM). Within the phosphorus-doped layer, the Wright etch fails to delineate OSF whose existence TEM observations have confirmed. Faster growth or slower shrinkage of OSF has been observed not only during phosphorus deposition but also during subsequent annealing with increasing phosphorus dose, indicating interstitial supersaturation. A model for interstitial generation has been proposed.
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