Abstract
In this study, diode applications of Crystal Violet (CV) and PEDOT materials were studied. The Ni/p-Si/Al, Ni/CV/p-Si/Al and Ni/PEDOT:PSS/CV/p-Si/Al diodes were fabricated. The I–V (current-voltage) characteristics of all diodes were analyzed at room temperature, it was determined that the PEDOT:PSS and CV materials improved the basic diode parameters. Also, I–V characteristics of Ni/PEDOT:PSS/CV/p-Si/Al of diode were investigated for different temperature values. It has been determined that the basic diode parameters are strongly dependent on temperature. It was determined that while the barrier height (Φb) increased with increasing temperature, the ideality factor (n) and the series resistance (Rs) values decreased. Using temperature-dependent measurements, it was determined that the potential barrier and ideality factor values at the contact interface has a double Gaussian distribution. In addition, C–V (capacitance-voltage) measurements of these diodes were analyzed depending on the frequency. It was found that the diode capacitance decreased with increasing frequency.
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