Abstract
The passivating effects of spin-coated films of Na2S⋅9H2O on GaAs surfaces have been studied using room-temperature photoluminescence (PL) and low-temperature PL spectroscopy. After passivation, the 300 K PL efficiency is increased on both n- and p-type material; improvements of up to 2800× are observed. The surface field and surface recombination-related notch features in the free and bound exciton emission spectra at low temperature are eliminated, implying that the residual band bending under illumination is less than 0.15 V.
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