Abstract

We have investigated the effect of the co-substitution of Sn IV and Ni II ions on the electronic structure and physicochemical property of InMO 4 (M = Nb, Ta) semiconductors. The co-substitution leads to a red-shift of absorption edge as well as to an appearance of satellite peak below the absorption edge. Depending on the nature of valence orbitals, the substitution of p- and d-block elements results in the lowering of conduction band and the formation of impurity states in the middle of bandgap, respectively. Such a band modification makes the photocatalytic activity of InMO 4 improved against the photodegradation of organic molecules.

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