Abstract
A controlled series of MOS transistors have been studied to determine the effects of low-oxygen-partial-pressure atmospheres, resulting from high-temperature anneals in CO–CO2 gas mixtures, on the oxide charges and surface-state densities of the silicon-dioxide gates of MOS transistors, by measurements of threshold voltages and low-frequency 1/f noise. The results indicate that both the threshold voltage and the 1/f noise increase as the result of the reducing treatment, with noise increasing by more than two orders of magnitude. Partial reoxidation of reduced SiO2 decreased the threshold voltage, but did not decrease the noise level.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
