Abstract
The effects of oxygen in Ar/O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> mixed sputtering gas on the magnetic and magnetooptic properties of PtMnSb films prepared by rf sputtering were investigated. In addition to a PtMnSb phase, the growth of Mn <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Sb, PtSb <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> , and oxides of Mn and Sb were observed in PtMnSb films prepared at low total sputtering gas pressures. The saturation magnetization M <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</sub> decreases with decreasing total gas pressure, leading to improvement in the perpendicular magnetic anisotropy of films. The change in the Kerr rotation angle θ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Kp</sub> with decreasing total gas pressure is small compared with the change in M <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</sub> , and μ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Kp</sub> /M <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</sub> is increased at low total gas pressures.
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