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Abstract
Effects of oxygen in Ni films on the Ni-induced lateral crystallization (NILC) of amorphous silicon (a-Si) films at various temperatures have been investigated. It was found that oxygen in Ni films retarded the nucleation of polycrystalline silicon (poly-Si) from a-Si, but had little effect on the growth rate of poly-Si. This is because that needed an incubation period to be reduced to Ni metal for the subsequent mediated crystallization of a-Si.
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