Abstract
This study investigated the effects of oxygen (O2) flow rates and annealing temperatures on optical, electrical, and structural properties of indium–gallium–zinc oxide (IGZO) film on glass substrates fabricated by using a co-sputtering system with two radio-frequency (RF) (In2O3 and Ga2O3) and one direct current (DC) (Zn) magnetron. The average transmittance and optical energy gap increased significantly when the oxygen flow rate was increased from 1 sccm to 3 sccm. An increased O2 flow during co-sputtering IGZO films caused the crystallinity of the InGaZn7O10 phase to increase, yielding a smoother and more uniform granular structure. The carrier mobility rose and the carrier concentration decreased with increasing O2 flow. The results of X-ray photoelectron spectra (XPS) analyses explained the impacts of the O2 flow rates and annealing temperatures on optical and electrical properties of the co-sputtered IGZO films. The optimum process conditions of the co-sputtered In2O3-Ga2O3-Zn films were revealed as an O2 flow rate of 3 sccm and an annealing temperature at 300 °C, which showed the largest average transmittance of 82.48%, a larger optical bandgap of 3.21 eV, and a larger carrier mobility of 7.01 cm2 V−1s−1. XPS results at various annealing temperatures indicated that the co-sputtered IGZO films with an O2 flow rate of 3 sccm have more stable chemical compositions among different annealing temperatures.
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