Abstract
Zinc Oxide (ZnO) thin films were deposited on thermally oxidized SiO2 by varying the oxygen flow rate. The deposition process were done using radio frequency (RF) magnetron sputtering at various oxygen flow rate ranging from 0 to 40 sccm. The surface morphology and crystallinity were analyzed by field emission scanning electron microscopy (FESEM) and X-Ray Diffractometer (XRD) respectively. The average thickness and deposition rate decreases with an increase of oxygen content. The grain size was measured by FESEM and it was found that it is also decreasing with the increased of oxygen flow rate. The films grown with 10 sccm oxygen shows the highest (002) peak however it is expected that the sample deposited with 40 sccm oxygen exhibit the highest sensitivity toward NH3 gas due to the highest surface to volume ratio.
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