Abstract
Reactive evaporation technique has been used to deposit thin films of alumina (Al 2O 3) on crystalline Si substrates at ambient temperatures in an electron beam (e-beam) evaporation system using alumina granules as evaporant material. The loss of oxygen due to dissociation of alumina has been compensated by bleeding high purity oxygen gas into the system during evaporation. A set of samples were prepared at different flow rates of oxygen and the films have been characterized by Spectroscopic Ellipsometry (SE), Atomic Force Microscopy (AFM), Grazing Incidence X-ray Reflectivity (GIXR) and X-ray Photoelectron Spectroscopy (XPS) measurements. The density and optical properties of the films showed interesting variation with oxygen flow rates.
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