Abstract
In this work, NbOx-based selector devices were fabricated by sputtering deposition systems. Metal-to-insulator transition characteristics of the device samples were investigated depending on the oxygen flow rate (3.5, 4.5, and 5.5 sccm) and the deposition time. The device stack was scanned by transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy (EDS). The yields, including MIT, nonlinear, and Ohmic, in working devices with different deposition conditions were also evaluated. Moreover, we observed the trend in yield values as a function of selectivity. In addition, the current-voltage (I-V) curves were characterized in terms of DC and pulse endurance. Finally, the switching speed and operating energies were obtained by applying a triangular pulse on the devices, and the recovery time and drift-free characteristics were obtained by the paired pulses.
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