Abstract
Polycrystalline Y2O3 thin films have been prepared by radio frequency (RF) reactive sputtering. The topographies of Y2O3 films were shown by AFM. The XPS measurement has found the interfacial silicates and the amorphous silicon sub-oxide (SiOx) interfacial layer which is also indicated by the FTIR investigation. The interfacial reactions have been induced by an oxygen-deficient or oxygen-sufficient reaction environment at Y2O3/Si interface.
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