Abstract
Amorphous carbon (a-C) thin films were deposited on Si (111) substrates by an oxygen RF plasma-assisted pulsed laser deposition (PLD) method at an oxygen pressure of 53 mPa, as well as in vacuum and oxygen gas ambient at 53 mPa for comparison, at substrate temperatures (Tsub) between room temperature and 480°C. An X-ray photoelectron spectroscopy (XPS) analysis showed that the highest sp3 content of the film was 58% in oxygen plasma PLD at Tsub=410°C. Under this condition, the film surface morphology was shown to be quite smooth with a roughness of about 5 nm, by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Effects of the oxygen plasma and the substrate temperature on the film properties were examined.
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