Abstract
We deposited a ZnO thin film on a microslide glass substrate at room temperature by employing the RF reactive magnetron sputtering process. Our results revealed that deposition rate decreases by increasing O 2/(Ar + O 2) ratio that was caused by two mechanisms. The first mechanism was the reduction of plasma density and, thus, argon ion density; caused by the addition of highly electronegative oxygen. While the second mechanism was target poisoning caused by the oxidation of the target. Additionally, at the O 2/(Ar + O 2) ratio of ∼0.3 and the help of XPS analysis the optimum stoichiometry of ZnO thin film (the highest binding energy and content fraction of O I peak (O–Zn bond)) and the best polycrystallinity (the lowest FWHM with largest grain size) was found.
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